ماسفت N کانال 200 ولت 9 آمپر IRF630 اورجینال

VDDS Drain-source voltage (VGS = 0 V) 200 V
VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V
VGS Gate-source voltage ±20 V
ID
Drain current (continuous) at TC = 25 °C 9 A
Drain current (continuous) at TC = 100 °C 6.5 A
IDM(1) Drain current (pulsed) 36 A
PTOT Total power dissipation at TC = 25 °C 120 W
EAS(2) Single pulse avalanche energy 110 mJ
dv/dt(3) Drain-body diode dynamic dv/dt ruggedness 5.8 V/ns
Tstg Storage temperature range
-65 to 175 °C
TJ Operating junction temperature range